| PART |
Description |
Maker |
| M7020R 7659 M7020R-083ZA1T M7020R-050ZA1T M7020R-0 |
32K x 68-bit Entry NETWORK SEARCH ENGINE
From old datasheet system
32 KBIT X 68 BIT ENTRY NETWORK SEARCH ENGINE
|
STMICROELECTRONICS[STMicroelectronics]
|
| M7010R-083ZA1T M7010R M7010R-066ZA1T 7658 |
From old datasheet system
16K x 68-bit Entry NETWORK SEARCH ENGINE
|
STMICROELECTRONICS[STMicroelectronics]
|
| KM64258C |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M5M5V5A36GP-85 M5M5V5A36GP M5M5V5A36GP-75 |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) Flow-Through NETWORK SRAM
|
RENESAS[Renesas Electronics Corporation]
|
| CTX8-1A-R CTX0.47-1-R CTX0.47-2-R CTX0.47-2P-R CTX |
ECONO-PAC?OCTA-PAC? OCTA-PAC? PLUS
Power Inductors and Transformers
Surface mount magnetics that can be used as singleor coupled inductors or 1:1 transformers that provide isolation between two windings
2 ELEMENT, 0.284 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
2 ELEMENT, 0.6 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Cooper Bussmann, Inc.
COOPER INDUSTRIES
|
| M5M5V5636GP-16 |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
RENESAS[Renesas Electronics Corporation]
|
| NRSJ151M25V10X12.5TBF NRSJ121M50V10X12.5TBF NRSJ10 |
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 470 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 25 V, 680 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 1000 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors 小型铝电解钙泛非i职权范围
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 180 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 1500 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 120 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 100 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 1000 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 330 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Ca pac i tors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 330 uF, THROUGH HOLE MOUNT
|
NIC Components Corp.
铝电解电
NIC Components, Corp.
|
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| CY7C287-55WC CY7C287-45JI |
64K x 8 Reprogrammable Registered PROM 64K X 8 UVPROM, 20 ns, CDIP28
64K X 8 OTPROM, 15 ns, PQCC32
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
|
